PART |
Description |
Maker |
MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|
AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF SWITCH Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36 Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
P4C1048L-70CWI P4C1048L-45PMB P4C1048L-45SMB P4C10 |
LOW POWER 512K x 8 CMOS STATIC RAM 低功率为512k × 8的CMOS静态RAM LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, CDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDSO32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, CDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, CDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, CDIP32
|
Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
MX27C4000A MX27C4000AMC-10 MX27C4000AMC-12 MX27C40 |
4M-BIT [512K x8] CMOS OTP ROM 512K X 8 OTPROM, 120 ns, PDSO32 ER 17C 17#16 PIN RECP WALL
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM 4194304-Bit (512K x 8) High Performance CMOS EPROM 4,194,304-Bit (512K x 8) High Performance CMOS EPROM 4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
MX29LV040CQI-70G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Macronix International Co., Ltd.
|
AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 |
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
|
Atmel Corp. Atmel, Corp.
|
KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM(为512k x8位低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44 From old datasheet system 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
S29CL016J0JDGH014 S29CL016J0JDGH037 S29CL016J0MDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 3.3V PROM, 54 ns, UUC74
|
Spansion, Inc. SPANSION LLC
|